B.E. III Sem Information Technology

III SEMESTER

3IT2. Electronic Devices & Circuits

 

I Diode circuits: diode as a ckt. Element, load line concept, clipping & clamping circuits, voltages multipliers.


II Devices: construction, characteristics and working principles of the following devices. Diodes, bjt, jfet, mos fet, ujt, photo diodes, LEDs, photo transistors. Solar cells .thermistor, LDR.


III Transistors: transistor characteristics, current components , current gains. Alpha and vita. Operating point. High bride model , h- parameter equivalent circuits . Ce, cb and cc configuration. Dc and ac analysis of ce,cc and cb amplifiers. Evers- moll model. Biasing and stabilization techniques. Thermal run away, thermal stability. Equivalent circuits and blessing of JFETs. And MosFET,s. Low frequency cs and cd JFET amplifiers . Fet as a voltage variable resistor.


IV Small signal amplifiers at low frequency: analysis of bjt and fet, dc and rc coupled amplifiers. Frequency response, midband gain, gains at low and high frequency. Analysis of dc and differential amplifiers, millers’ theorem. Cascading transistor amplifiers, darlington and cascaded ckts. Emitter and source followers.


V Oscillators:
concept of feedback classification, criterion for oscillation. Tuned collector, hartely, colpittes , rc- phase shift , wein bridge and crystal oscillators , astable, monostable and bistable multivibrators . Schmitt trigger.