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I
Introductin to technologies: Semiconductor substrate-Crystal defect.
Electronic Grade Silicon. Czochraslski growth float, Zone growth.
Characterization & Evauation of crystal: wafer preparation - silicon
shaping, Etching and polishing chemical cleaning
II Diffusion & Ion Implantation: Ficks diffusion equation in one
dimension atomic model, Analytical solution of ficks law, Correction to
simple theory, Diffusion in SiO2 Ion implantation and ion implantation
systems, Growth mechanism and Deal-Grove model of oxidation, Linear and
Parabolic Rate coefficient, the structure of SiO2 Oxidation technique and
system, Oxide properties.
III Chemical vapor deposition and layer growth: CVD for deposition
of dielectric and polysilicon – a simple CVD system chemical equilibrium
and the law of mass action, Introduction to atmospheric CVD of dielectric,
low pressure CVD of dielectric and semiconductor, Epitaxy – vapor phase
epitaxy, Defects in Epitaxial growth, Metal organic chemical vapor
deposition, molecular beam epitaxy .
IV Pattern Transfer: Introduction to photo/optical lithography,
contact/proximity printers, projection printers, mask generation,
Photoresists. Wet etching, Plasma etching Reaction ion etching.
V VLSI PROCESS INTEGRATION : Junction and Oxide Isolation, LOCOS
methods, Trench Isolation, SOI; Metallization, Planarization. Fundamental
consideration for IC Processing NMOS IC Technology, CMOS IC Technology,
Bipolar IC Technology.
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