III B.E. (Computer Engg.)

V SEMESTER

5CP6.2 IC TECHNOLOGY

  1. INTRODUCTION TO TECHNOLOGIES: Semiconductor Substrate -Crystal defects. Electronic Grade SilicOl1. Czochraslski growth float, lone Growth. Characterization & Evaluation UT Crystals: Water- Preparation -Silicon  etching. And polishing chemical cleaning.

  2. DIFFUSION & ION IMPLANTATION: Ficks Diffusion Equation in One Dimension. Atomic model, Analytical Solution of Ficks Law, Correction to simple theory, Diffusion in SiO2, Ion implantation and Ion Implantation Systems, Growth mechanism and Deal -Grove Model of Oxidation, Linear and Parabolic Rate Coefficient, the structure of SiO2 Oxidation techniques and system, Oxide Properties.

  3. CHEMICAL VAPOUR DEPOSITION AND LAYER GROWTH: CVD for deposition of dielectric and polysilicon-a simple CVD system chemical equilibrium and the law of mass action, Introduction atmospheric CVD of dielectric, low pressure CVD of dielectric semiconductor. Epitaxy-Vapor Phase epitaxy, Defects in Epitaxial growth, Metal Organic Chemical Vapor Phase, Defects in Epitaxial growth, Metal Organic Chemical Vapor Deposition, Molecular epitaxy.

  4. PATTERN TRANSFER: Introduction to photo/optical lithography contact/proximity printers, projection printers, mask generation Photoresists. Wet etching, Plasma etching. Reaction ion etching.

  5. VLSI PROCESS INTEGRATION: Junction and Oxide Isolation LOCOS methods, Trench Isolation, SOl; Metallization, Planarization Fundamental consideration for IC Processing. NMOS IC Technology, COMOS IC Technology, Biploar IC Technology.

 Recommended Books:

  1. S.M.Sze -VLSI Technology, Mc-Graw Hill.

  2. D. Nagchoudhary -Principles of Microelectronic Technology, Wheeler Publishing.

  3. Stephen A. Campbell -The Science and Engineering of Microelectronic Fabrication, Oxford University Press.

  4. Hong Xiao -Introduction to Semiconductor Manufacturing. Prentice Hall